| PART |
Description |
Maker |
| CJW1012 |
SOT-323 Plastic-Encapsulate MOSFETS
|
ZP Semiconductor
|
| CJ2102 |
SOT-323 Plastic-Encapsulate MOSFETS
|
ZP Semiconductor
|
| KTA2014 |
SOT-323 Plastic-Encapsulate Transistors
|
Jiangsu Changjiang Elec...
|
| BAV99W |
SOT-323 Plastic-Encapsulate Diodes
|
WILLAS ELECTRONIC CORP
|
| MMST2222A |
SOT-323 Plastic-Encapsulate Transistors
|
TY Semiconductor Co., L...
|
| CJ3134KW |
SOT-323 Plastic-Encapsulate MOSFETS
|
TY Semiconductor Co., Ltd
|
| MMST2907A |
SOT-323 Plastic-Encapsulate Transistors
|
TY Semiconductor Co., L...
|
| CESDB5V0AT3 |
SOT-323 Plastic-Encapsulate Diodes
|
TY Semiconductor Co., L...
|
| BAR63V-04W-GS18 BAR63V-04W-GS08 |
RF PIN Diodes - Dual, Series in SOT-323 射频PIN二极双，系列采用SOT - 323
|
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
|
| BC857BWT1 BC857AWT1 BC858BWT1 BC856BWT1 BC858AWT1 |
CASE 419-02, STYLE 3 SOT-323/SC-70 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
CASE 419-02, STYLE 3 SOT-323/SC-70 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
CASE 419-02/ STYLE 3 SOT-323/SC-70
CASE 419-02 STYLE 3 SOT-323/SC-70
|
Motorola Mobility Holdings, Inc.
Motorola Inc
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| 2SC5463 2SC5463O |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 60MA I(C) | SOT-323 晶体管|晶体管|叩| 12V的五（巴西）总裁| 60mA的一（c）|的SOT - 323
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
Toshiba, Corp.
Toshiba Semiconductor
|
| 2SC4185 2SC4185U22 |
TRANSISTOR | BJT | NPN | 14V V(BR)CEO | 50MA I(C) | SOT-323 晶体管|晶体管|叩| 14V的五（巴西）总裁| 50mA的一（c）|的SOT - 323
UHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
|
NEC, Corp.
|
